Total 9 products
-
CGHV96100F2 100 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched; GaN HEMT Power Amplifier
CGHV96100F2 100 W; 7.9 - 9.6 GHz; 50 ohm; Input/Output-Matched; GaN HEMT Power Amplifier¥ 0.00Buy now
-
CMPA2060035F 35 W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier
CMPA2060035F 35 W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier¥ 0.00Buy now
-
M37049G-16 Four channel 25G / 28G CDR with integrated input equalizer
M37049G-16 Four channel 25G / 28G CDR with integrated input equalizer¥ 0.00Buy now
-
MRF275G The RF MOSFET Line 150W, 500MHz, 28V
MRF275G The RF MOSFET Line 150W, 500MHz, 28V¥ 0.00Buy now
-
SWD-119-PIN Quad Driver for GaAs FET Switches and Attenuators
SWD-119-PIN Quad Driver for GaAs FET Switches and Attenuators¥ 0.00Buy now
-
CGH40120F 120 W RF Power GaN HEMT
CGH40120F 120W RF Power GaN HEMT¥ 0.00Buy now
-
MAVR-000120-14110P GaAs Hyperabrupt
MAVR-000120-14110P GaAs Hyperabrupt¥ 0.00Buy now
-
MADP-000907-14020P AIGaAs Pin Diode
MADP-000907-14020P AIGaAs Pin Diode¥ 0.00Buy now
-
CMPA5585030D: 30W output power, 5.5-8.5 GHz wide bandwidth, GaN MMIC power amplifier
Hello friends, today I'm going to introduce you to Macom's power amplifier – CMPA5585030D. Its core mission is to operate in a wide frequency band from 5.5 to 8.5 GHz and deliver a stable output of up to 30 watts. To achieve such a wide bandwidth, it features a compact two-stage reaction-matched amplifier design inside. Its small signal gain can reach about 30 dB, while its Power Added Efficiency (PAE) can be maintained between 40% and 45% when inputting a 26 dBm signal,¥ 0.00Buy now
Email: sales@tingwinrf.com
Address : FLAT/RM 1101D 11/F LIPPO SUN PLAZA 28 CANTON ROAD TSIM SHA TSUI KL