MRF275G The RF MOSFET Line 150W, 500MHz, 28V

N-Channel Enhancement Mode Device

100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1

Overall lower capacitance @ 28 V: Ciss - 135 pF, Crss - 17 pF, coss - 140 pF

Typical Data for Power Amplifiers in Industrial and Commercial Applications:

Typical performance @ 225 MHz, 28 Vdc: OutputPpower - 200 W, Power Gain - 15 dB, efficiency - 65%

Simplified AVC, ALC and Modulation

Typical Performance @ 400 MHz, 28 Vdc: Output Power - 150 W, power Gain - 12.5 dB, Efficiency - 60%

Guaranteed Performance @ 500 MHz, 28 Vdc: Output power - 150 W, power Gain - 10 dB, (min.), Efficiency - 50% (min.)

The MRF275G is a RF power N-channel enhancement mode field-effect transistor (FETs) designed for HF, VHF and UHF power amplifier applications.M/A-COM RF MOSFETs feature a vertical structure with a planar design.M/ACOM Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs.The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage.Power output can be varied over a wide range with a low power dc control signal.