CGH40120F 120 W RF Power GaN HEMT

Up to 2.5 GHz Operation

20 dB Small Signal Gain at 1.0 GHz

15 dB Small Signal Gain at 2.0 GHz

120W Typical PSAT

70% Efficiency at PSAT

28V Operation

Note: CGH40120F is Not Recommended for New Designs.Refer to CCG2H40120F.The CGH40120 is an unmatched; gallium-nitride (GaN); high-electron-mobility transistor (HEMT). The CGH40120; operating from a 28-volt rail; offers a général-purpose; broadband solution to a variety of RF and microwave applications.GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities; making the CGH40120 ideal for linear and compressed amplifier circuits.The transistor is available in a metal-ceramic pill and flange package.