CMPA2060035F 35 W; 2.0 - 6.0 GHz; 28V; GaN MMIC Power Amplifier

35W Typical PSAT

Operation up to 32V

High Breakdown Voltage

High Temperature Operation

The CMPA2060035 is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity and higher thermal conductivity.GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved in a small-footprint. Available in die and a screw-down package featuring a copper-tungsten heat sink.